6.720 Integrated Microelectronic Devices
Covers physics of microelectronic semiconductor devices for integrated circuit applications. Topics include semiconductor fundamentals, p-n junction, metal-oxide semiconductor structure, metal-semiconductor junction, MOS field-effect transistor, and bipolar junction transistor. Studies modern nanoscale devices, including electrostatic scaling, materials beyond Si, carrier transport from the diffusive to the ballistic regime. Emphasizes physical understanding of device operation through energy band diagrams and short-channel MOSFET device design. Includes device modeling exercises. Familiarity with MATLAB required.
Lecture occurs 10:00 AM to 11:00 AM on Mondays, Wednesdays, Thursdays and Fridays in 66-144.
This class counts for a total of 12 credits.
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