3.43[J] Integrated Microelectronic Devices
Covers physics of microelectronic semiconductor devices for integrated circuit applications. Topics include semiconductor fundamentals, p-n junction, metal-oxide semiconductor structure, metal-semiconductor junction, MOS field-effect transistor, and bipolar junction transistor. Studies modern nanoscale devices, including electrostatic scaling, materials beyond Si, carrier transport from the diffusive to the ballistic regime. Emphasizes physical understanding of device operation through energy band diagrams and short-channel MOSFET device design. Familiarity with MATLAB required.
3.43[J] will be offered this semester (Fall 2018). It is instructed by J. Del Alamo.
This class counts for a total of 12 credits. This is a graduate-level class.
You can find more information at the http://www.google.com/search?&q=MIT+%2B+3.43&btnG=Google+Search&inurl=https site.
© Copyright 2015 Yasyf Mohamedali